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K4S643233F-SDI Dataheets PDF



Part Number K4S643233F-SDI
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
Datasheet K4S643233F-SDI DatasheetK4S643233F-SDI Datasheet (PDF)

www.DataSheet4U.com K4S643233F-S(D)E/N/I/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.5 December 2002 Rev. 1.5 Dec. 2002 www.DataSheet4U.com K4S643233F-S(D)E/N/I/P 512K x 32Bit x 4 Banks SDRAM FEATURES • • • • 3.0V & 3.3 power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All in.

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www.DataSheet4U.com K4S643233F-S(D)E/N/I/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.5 December 2002 Rev. 1.5 Dec. 2002 www.DataSheet4U.com K4S643233F-S(D)E/N/I/P 512K x 32Bit x 4 Banks SDRAM FEATURES • • • • 3.0V & 3.3 power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All inputs are sampled at the positive going edge of the system clock . Burst read single-bit write operation. DQM for masking. Auto & self refresh. 64ms refresh period (4K cycle). Extended temperature operation (-25°C to 85 °C). Industrial temperature operation ( -40° C to 85° C). 90balls FBGA(-SXXX -Pb, -DXXX -Pb Free). CMOS SDRAM GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. • • • • • • • ORDERING INFORMATION Part No. K4S643233F-SE/N/I/P75 K4S643233FSE/N/I/P1H K4S643233F-SE/N/I/P1L K4S643233F-DE/N/I/P75 K4S643233F-DE/N/I/P1H K4S643233F-DE/N/I/P1L Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=2) 105MHz(CL=3)*1 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=2) 105MHz(CL=3)*1 LVCMOS 90FBGA Pb Free Interface Package 90FBGA Pb FUNCTIONAL BLOCK DIAGRAM -S(D)E/N ; Normal/Low Power, Temp : -25 °C ~ 85 °C. -S(D)I/P ; Normal/Low Power, Temp : -40° C ~ 85 °C. Note : 1. In case of 40MHz Frequency, CL1 can be supported. I/O Control LWE Data Input Register LDQM Bank Select 512K x 32 512K x 32 512K x 32 512K x 32 Refresh Counter Output Buffer Row Decoder Sense AMP Row Buffer DQi Address Register CLK ADD Column Decoder Col. Buffer LRAS LCBR Latency & Burst Length LCKE LRAS LCBR LWE LCAS Programming Register LWCBR LDQM Timing Register CLK CKE CS RAS CAS WE DQM *Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 Dec. 2002 www.DataSheet4U.com K4S643233F-S(D)E/N/I/P 90-Ball FBGA Package Dimension and Pin Configuration < Bottom View*1 > E1 9 A e B C D D E F G D1 H J K D/2 L M N P R E E/2 8 7 6 5 4 3 2 1 CMOS SDRAM < Top View*2 > 90Ball(6x15) CSP 1 A B C D E F G H J K L M N P R DQ26 DQ28 VSSQ VSSQ V DDQ V SS A4 A7 CLK DQM1 V DDQ VSSQ VSSQ DQ11 DQ13 2 DQ24 V DDQ DQ27 DQ29 DQ31 DQM3 A5 A8 CKE NC DQ8 DQ10 DQ12 V DDQ DQ15 3 V SS VSSQ DQ25 DQ30 NC A3 A6 NC A9 NC V SS DQ9 DQ14 VSSQ V SS 7 VD D V DDQ DQ22 DQ17 NC A2 A10 NC BA0 CAS VD D DQ6 DQ1 V DDQ VD D 8 DQ23 V SSQ DQ20 DQ18 DQ16 DQM2 A0 BA1 CS WE DQ7 DQ5 DQ3 V SSQ DQ0 9 DQ21 DQ19 VDDQ VD.


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