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K4S643233H-FHN

Samsung semiconductor

Mobile-SDRAM


Description
K4S643233H - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES 3.0V & 3.3V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). EMRS cycle with address key...



Samsung semiconductor

K4S643233H-FHN

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