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K4S643233H-FG Dataheets PDF



Part Number K4S643233H-FG
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description Mobile-SDRAM
Datasheet K4S643233H-FG DatasheetK4S643233H-FG Datasheet (PDF)

K4S643233H - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Funct.

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