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EBE21FE8ACWR Dataheets PDF



Part Number EBE21FE8ACWR
Manufacturers Elpida Memory
Logo Elpida Memory
Description 2GB Fully Buffered DIMM
Datasheet EBE21FE8ACWR DatasheetEBE21FE8ACWR Datasheet (PDF)

DATA SHEET www.DataSheet4U.com 2GB Fully Buffered DIMM EBE21FE8ACWR Specifications • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line memory module (FB-DIMM) PCB height: 30.35mm Lead pitch: 1.00mm  Advanced Memory Buffer (AMB): 655-ball FCBGA  Lead-free (RoHS compliant) • Power supply  DDR2 SDRAM: VDD = 1.8V ± 0.1V  AMB: VCC = 1.5V + 0.075V/ −0.045V • Data rate:.

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DATA SHEET www.DataSheet4U.com 2GB Fully Buffered DIMM EBE21FE8ACWR Specifications • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line memory module (FB-DIMM) PCB height: 30.35mm Lead pitch: 1.00mm  Advanced Memory Buffer (AMB): 655-ball FCBGA  Lead-free (RoHS compliant) • Power supply  DDR2 SDRAM: VDD = 1.8V ± 0.1V  AMB: VCC = 1.5V + 0.075V/ −0.045V • Data rate: 667Mbps (max.) • Eight internal banks for concurrent operation (components) • Interface: SSTL_18 • Burst lengths (BL): 4, 8 • /CAS Latency (CL): 3, 4, 5 • Precharge: auto precharge option for each burst access • Refresh: auto-refresh, self-refresh • Refresh cycles: 8192 cycles/64ms  Average refresh period 7.8µs at 0°C ≤ TC ≤ +85°C 3.9µs at +85°C < TC ≤ +95°C • Operating case temperature range  TC = 0°C to +95°C Features • JEDEC standard Raw Card B Design • Industry Standard Advanced Memory Buffer (AMB) • High-speed differential point-to-point link interface at 1.5V (JEDEC spec)  14 north-bound (NB) high speed serial lanes  10 south-bound (SB) high speed serial lanes • Various features/modes:  MemBIST and IBIST test functions  Transparent mode and direct access mode for DRAM testing  Interface for a thermal sensor and status indicator • Channel error detection and reporting • Automatic DDR2 SDRAM bus and channel calibration • SPD (serial presence detect) with 1piece of 256 byte serial EEPROM Note: Warranty void if removed DIMM heat spreader. Performance FB-DIMM System clock frequency 167MHz Speed grade PC2-5300F Peak channel throughput 8.0GByte/s FB-DIMM link data rate 4.0Gbps DDR2 SDRAM Speed Grade DDR2-667 (5-5-5) DDR data rate 667Mbps Document No. E1384E10 (Ver. 1.0) Date Published October 2008 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2008 EBE21FE8ACWR Ordering Information Part number EBE21FE8ACWR-6E-E DIMM speed grade PC2-5300F Component JEDEC speed bin (CL-tRCD-tRP) DDR2-667 (5-5-5) Mounted devices* 1 www.DataSheet4U.com Mounted AMB* IDT Rev. L4 2 EDE1108ACBG-8E-E EDE1108ACBG-6E-E Notes: 1. Please refer to the EDE1104ACBG, EDE1108ACBG, EDE1116ACBG datasheet (E1173E) for detailed operation part and timing waveforms. 2. Please refer to the following documents for detailed operation part and timing waveforms. Advanced Memory Buffer (AMB) specification FB-DIMM Architecture and Protocol specification Part Number E B E 21 F E 8 A C W R - 6E - E Elpida Memory Type B: Module Environment code E: Lead Free (RoHS compliant) Product Family E: DDR2 DRAM Speed Grade 6E: DDR2-667 (5-5-5) AMB Device Information R: IDT, Rev.L4 Module Outline W: 240-pin DIMM Density / Rank 21: 2GB/2-rank Module Type F: Fully Buffered Mono Density E: 1Gbit Mono Organization 8: x8 Die Rev. (Mono) Power Supply, Interface A: 1.8V, SSTL_1.8 Data Sheet E1384E10 (Ver. 1.0) 2 EBE21FE8ACWR Advanced Memory Buffer Overview www.DataSheet4U.


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