Document
DATA SHEET
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2GB Fully Buffered DIMM
EBE21FE8ACWR
Specifications
• Density: 2GB • Organization 256M words × 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line memory module (FB-DIMM) PCB height: 30.35mm Lead pitch: 1.00mm Advanced Memory Buffer (AMB): 655-ball FCBGA Lead-free (RoHS compliant) • Power supply DDR2 SDRAM: VDD = 1.8V ± 0.1V AMB: VCC = 1.5V + 0.075V/ −0.045V • Data rate: 667Mbps (max.) • Eight internal banks for concurrent operation (components) • Interface: SSTL_18 • Burst lengths (BL): 4, 8 • /CAS Latency (CL): 3, 4, 5 • Precharge: auto precharge option for each burst access • Refresh: auto-refresh, self-refresh • Refresh cycles: 8192 cycles/64ms Average refresh period 7.8µs at 0°C ≤ TC ≤ +85°C 3.9µs at +85°C < TC ≤ +95°C • Operating case temperature range TC = 0°C to +95°C
Features
• JEDEC standard Raw Card B Design • Industry Standard Advanced Memory Buffer (AMB) • High-speed differential point-to-point link interface at 1.5V (JEDEC spec) 14 north-bound (NB) high speed serial lanes 10 south-bound (SB) high speed serial lanes • Various features/modes: MemBIST and IBIST test functions Transparent mode and direct access mode for DRAM testing Interface for a thermal sensor and status indicator • Channel error detection and reporting • Automatic DDR2 SDRAM bus and channel calibration • SPD (serial presence detect) with 1piece of 256 byte serial EEPROM Note: Warranty void if removed DIMM heat spreader.
Performance
FB-DIMM System clock frequency 167MHz Speed grade PC2-5300F Peak channel throughput 8.0GByte/s FB-DIMM link data rate 4.0Gbps DDR2 SDRAM Speed Grade DDR2-667 (5-5-5) DDR data rate 667Mbps
Document No. E1384E10 (Ver. 1.0) Date Published October 2008 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2008
EBE21FE8ACWR
Ordering Information
Part number EBE21FE8ACWR-6E-E DIMM speed grade PC2-5300F Component JEDEC speed bin (CL-tRCD-tRP) DDR2-667 (5-5-5) Mounted devices*
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Mounted AMB* IDT Rev. L4
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EDE1108ACBG-8E-E EDE1108ACBG-6E-E
Notes: 1. Please refer to the EDE1104ACBG, EDE1108ACBG, EDE1116ACBG datasheet (E1173E) for detailed operation part and timing waveforms. 2. Please refer to the following documents for detailed operation part and timing waveforms. Advanced Memory Buffer (AMB) specification FB-DIMM Architecture and Protocol specification
Part Number
E B E 21 F E 8 A C W R - 6E - E
Elpida Memory
Type B: Module
Environment code E: Lead Free (RoHS compliant)
Product Family E: DDR2
DRAM Speed Grade 6E: DDR2-667 (5-5-5)
AMB Device Information R: IDT, Rev.L4 Module Outline W: 240-pin DIMM
Density / Rank 21: 2GB/2-rank Module Type F: Fully Buffered Mono Density E: 1Gbit
Mono Organization 8: x8
Die Rev. (Mono)
Power Supply, Interface A: 1.8V, SSTL_1.8
Data Sheet E1384E10 (Ver. 1.0)
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EBE21FE8ACWR
Advanced Memory Buffer Overview
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