STM8020

www.DataSheet4U.com STM8020 SamHop Microelectronics Corp. Mar. 30 2007 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 35V F E AT UR E S ( m Ω ) Max ID 12A RDS(ON) S uper high dense cell design for low R DS (ON ). R ugged and reliable. S urface Mount P ackage. E S D P rotected. 9 @ VGS = 10V 13 @ VGS = 4.5V SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol V DS V GS 25 C 70 C IDM IS PD Ta=70 C ID Limit 35 20 12 9.6 48 1.7 2.5 Unit V V A A A A W Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C 1.6 T J , T S TG -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 50 C /W 1 www.DataSheet4U.com STM8020 ELECTRICAL CHARACTERISTICS (TA= 25 C unless otherwise noted) Parameter 5 Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS CISS COSS CRSS c Condition VGS =0V, ID = 250uA VDS=28V, VGS = 0V VGS = 20V, VDS =0V VDS = VGS, ID = 250uA VGS= 10V, ID = 10A VGS = 4.5V, ID = 6A VDS = 10V, VGS = 10V VDS = 10V, ID =10A Min Typ C Max Unit 35 1 10 1 1.4 7.2 9.5 20 25 1400 3 9 V uA uA V m ohm OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 13 m o...