BUK9212-55B

www.DataSheet4U.com BUK9212-55B TrenchMOS™ logic level FET M3D300 Rev. 02 — 12 December 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 185 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 173 mJ s ID ≤ 75 A s RDSon = 10.2 mΩ (typ) s Ptot ≤ 167 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Simplified outline [1] Description gate (g) drain (d) source (s) mounting base; connected to drain (d) Symbol d mb g s MBB076 2 1 Top view 3 MBK091 SOT428 (D-PAK) [1] It is not possible to make connection to pin 2 of the SOT428 package. Philips Semiconductors BUK9212-55B www.DataSheet4U.com TrenchMOS™ logic level FET 3. Ordering information Table 2: Ordering information Package Name BUK9212-55B D-PAK Description Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped). Version SOT428 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain ...