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MIG300J101H

Part Number	MIG300J101H
Manufacturer	Toshiba Semiconductor
Description	TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Published	Mar 20, 2010
Detailed Description	MIG300J101H TOSHIBA Intelligent Power Module Silicon N Channel IGBT www.DataSheet4U.com MIG300J101H High Power Switchin...
Datasheet	MIG300J101H PDF File

Overview

MIG300J101H TOSHIBA Intelligent Power Module Silicon N Channel IGBT www.
DataSheet4U.
com MIG300J101H High Power Switching Applications Motor Control Applications l Integrates inverter power circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over temperature) in one package.
l The electrodes are isolated from case.
l High speed type IGBT : VCE (sat) = 2.
5V (max) toff = 2.
6µs (max) trr = 0.
15µs (max) l Package dimensions l Weight : 520g : TOSHIBA 2-121A1A Equivalent Circuit 1 2002-12-06 MIG300J101H Maximum Ratings (Tj = 25°C) Stage Characteristic Supply voltage Collector−emitter voltage Inverter Collector current Forward current Collector powe...

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MIG300J101H TOSHIBA Intelligent Power Module Silicon N Channel IGBT - Toshiba Semiconductor

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