Document
Ordering number : ENA0414
SB0503EC
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
SB0503EC
Applications
•
Low IR Schottky Barrier Diode
30V, 0.5A Rectifier
High frequency rectification (switching regulators, converters, choppers).
Features
• • •
Low switching noise. Low leakage current and high reliability due to planar structure. Ultraminiature (1008 size) and thin (0.6mm) leadless package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle Conditions Ratings 30 35 0.5 5 --55 to +150 --55 to +150 Unit V V A A °C °C
Electrical Characteristics at Ta=25°C
Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF IR C trr Rth(j-a) IR=0.2mA IF=0.5A VR=15V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Mounted in Cu-foiled area of 0.72mm2✕0.03mm on glass epoxy board 200 Conditions Ratings min 30 0.65 1.5 6 10 typ max Unit V V µA pF ns
°C / W
Marking : DA
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2906SB TI IM TC-00000343 No. A0414-1/3
SB0503EC
Package Dimensions
unit : mm (typ) 7035-002
Cathode Mark (On the top)
Top View 0.8 Polarity Discriminating Mark
Electrical Connection
www.DataSheet4U.com
2
Anode
Cathode
1.0
*Electorodes : on the bottom
Top view
Cathode Mark (Top)
1
0.6
Anode Cathode
0.7
0.3
1
0.6
2
1 : Anode 2 : Cathode SANYO : ECSP1008-2
Bottom View
trr Test Circuit
Duty≤10%
10mA
50Ω 10µs
100Ω
10Ω
--5V trr
10mA
1mA
2 1.0 7 5
IF -- VF
1000
IR -- VR
Ta=150°C 125°C
100
°C 5 0° C
3 2 0.1 7 5 3 2 0.01 7 5 3 2
Reverse Current, IR -- µA
Forward Current, IF -- A
100°C
75°C
10
75
Ta= 1 150 °C 25°C 100 °C
1.0
50°C
25°C
2 0°C 5°C
0.1
0°C
0.01
0.001 0
--25°C
0.001 0.5 0.6 0.7 0.8 0.9 0 5 10 15 20 25 30 35 IT11083 IT11082
0.1
0.2
0.3
0.4
Forward Voltage, VF -- V
Reverse Voltage, VR -- V
No. A0414-2/3
SB0503EC
Average Forward Power Dissipation, PF(AV) -- W
0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0 0.1 0.2 180° 360°
Rectangular wave
θ 360°
Average Reverse Power Dissipation, PR(AV) -- W
PF(AV) -- IO
(1) (2) (4) (3)
1.4E--05
PR(AV) --www.DataSheet4U.com VRM
(1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangular wave
VR θ 360°
1.2E--05
(1) (2)
1.0E--05
Sine wave
8.0E--06
(3)
6.0E--06
Sine wave
VR 180° 360°
4.0E--06
(1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180°
0.3 0.4 0.5 0.6 IT10239
(4)
2.0E--06
0.0E+00 0 5 10 15 20 25 30 35 IT10240
Average Output Current, IO -- A
180 160
Peak Reverse Voltage, VRM -- V
100 7
Tc -- IO
C -- VR
Interterminal Capacitance, C -- pF
(3)
0.6 IT11697
Case Temperature, Tc -- °C
140 120 100 80 60 40 20 0
(1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180°
5 3 2
Rectangular wave
θ 360°
10 7 5 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
Sine wave
180° 360°
(1)
0.2 0.3 0.4
(2) (4)
0.5
0
0.1
Average Output Current, IO -- A
Reverse Voltage, VR -- V
IT10242
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human l.