Document
Ordering number : ENN7998
MCH5812
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MCH5812
Features
•
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
General-Purpose Switching Device Applications
•
•
Composite type with a N-channel sillicon MOSFET (MCH3445) and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 1 3 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit 20 ±12 2 8 0.8 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit
Marking : QN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2004PE TS IM TB-00001089 No.7998-1/6
MCH5812
Electrical Characteristics at Ta=25°C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=0.5mA IF=0.3A IF=0.5A VR=6V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. 15 0.3 0.33 20 10 0.33 0.36 90 V V V µA pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V ID=0.1A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A IS=2A, VGS=0 0.4 1.4 2.4 125 165 225 120 31 25 9 29 18 22 2.3 0.5 0.75 0.94 1.2 165 235 340 20 1 ±10 1.3 V µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions min
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Ratings typ max
Unit
Package Dimensions unit : mm 2195
0.25
Electrical Connection
5
0.3 4
2.1 1.6
4
0.15
5
1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain
1 2 3
0.07
3
0.25
2
1
Top view
0.65 2.0
(Bottom view)
5
4
0.85
1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5
1
2
3
(Top view)
No.7998-2/6
MCH5812
Switching Time Test Circuit
[MOSFET]
VIN 4V 0V VIN PW=10µs D.C.≤1% ID=1A RL=10Ω VOUT 50Ω 10µs --5V 100Ω 10Ω VDD=10V
trr Test Circuit
[SBD]
Duty≤10%
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100mA
D
G
100mA
trr
P.G
50Ω
S
MCH5812
1.0
ID -- VDS
10.0V 4.0V
2.5V
[MOSFET]
1.0
ID -- VGS
[MOSFET] VDS=10V
0.9 0.8
1.8
V
0.8
Drain Current, ID -- A
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0
Drain Current, ID -- A
1.5V
0.6
0.4
Ta=7 5°C
0.2
VGS=1.0V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IT06290 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta [MOSFET]
400
Drain-to-Source Voltage, VDS -- V IT06289 RDS(on) -- VGS [MOSFET] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
400 350 300 250 200 150 100 50 0 --60
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
350 300 250
ID=0.1A
200 150 100 50 0 0 2
0.5A 1.0A
.1A, I D=0
=1.8 VGS
I D= =4.0V A, V GS .0 1 = ID
, VG 0.5A
2.5 S=
4
6
8
10 IT06352
--40
--20
0
20
40
60
25 °C
V
V
--25° C
80
100
120
10mA
140
160
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- °C
IT06353
No.7998-3/6
MCH.