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MCH5812 Dataheets PDF



Part Number MCH5812
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description General-Purpose Switching Device Applications
Datasheet MCH5812 DatasheetMCH5812 Datasheet (PDF)

Ordering number : ENN7998 MCH5812 www.DataSheet4U.com MCH5812 Features • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications • • Composite type with a N-channel sillicon MOSFET (MCH3445) and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications.

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Ordering number : ENN7998 MCH5812 www.DataSheet4U.com MCH5812 Features • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications • • Composite type with a N-channel sillicon MOSFET (MCH3445) and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 1 3 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit 20 ±12 2 8 0.8 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : QN Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2004PE TS IM TB-00001089 No.7998-1/6 MCH5812 Electrical Characteristics at Ta=25°C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=0.5mA IF=0.3A IF=0.5A VR=6V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. 15 0.3 0.33 20 10 0.33 0.36 90 V V V µA pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V ID=0.1A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A IS=2A, VGS=0 0.4 1.4 2.4 125 165 225 120 31 25 9 29 18 22 2.3 0.5 0.75 0.94 1.2 165 235 340 20 1 ±10 1.3 V µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions min www.DataSheet4U.com Ratings typ max Unit Package Dimensions unit : mm 2195 0.25 Electrical Connection 5 0.3 4 2.1 1.6 4 0.15 5 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 1 2 3 0.07 3 0.25 2 1 Top view 0.65 2.0 (Bottom view) 5 4 0.85 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5 1 2 3 (Top view) No.7998-2/6 MCH5812 Switching Time Test Circuit [MOSFET] VIN 4V 0V VIN PW=10µs D.C.≤1% ID=1A RL=10Ω VOUT 50Ω 10µs --5V 100Ω 10Ω VDD=10V trr Test Circuit [SBD] Duty≤10% www.DataSheet4U.com 100mA D G 100mA trr P.G 50Ω S MCH5812 1.0 ID -- VDS 10.0V 4.0V 2.5V [MOSFET] 1.0 ID -- VGS [MOSFET] VDS=10V 0.9 0.8 1.8 V 0.8 Drain Current, ID -- A 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 Drain Current, ID -- A 1.5V 0.6 0.4 Ta=7 5°C 0.2 VGS=1.0V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IT06290 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta [MOSFET] 400 Drain-to-Source Voltage, VDS -- V IT06289 RDS(on) -- VGS [MOSFET] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 400 350 300 250 200 150 100 50 0 --60 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 350 300 250 ID=0.1A 200 150 100 50 0 0 2 0.5A 1.0A .1A, I D=0 =1.8 VGS I D= =4.0V A, V GS .0 1 = ID , VG 0.5A 2.5 S= 4 6 8 10 IT06352 --40 --20 0 20 40 60 25 °C V V --25° C 80 100 120 10mA 140 160 Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C IT06353 No.7998-3/6 MCH.


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