15GN01NA

Ordering number : ENA1105 15GN01NA www.DataSheet4U.com SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 15GN01NA Features VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications Small ON-resistance [Ron=2Ω (IB=3mA)]. Small output capacitance [Cob=1.3pF (VCB=10V)]. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 15 8 3 50 400 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Output ON resistance Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Ron VCB=10V, IE=0A VEB=2V, IC=0A VCE=5V, IC=10mA VCE=5V, IC=10mA VCB=10V, f=1MHz IC=20mA, IB=2mA IC=20mA, IB=2mA IB=3mA, f=10kHz 200 1.0 1.5 1.3 0.06 0.85 2.0 0.12 1.0 Conditions Ratings min typ max 0.5 0.5 400 GHz pF V V Ω Unit μA μA Marking : ZA Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The pr...