www.DataSheet4U.com
STB/P434S
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Level Enhancement Mode Field E...
www.DataSheet4U.com
STB/P434S
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
40V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-263 Package.
ID
60A
R DS(ON) (m Ω) Max
9.2 @ VGS=10V 11.5 @ VGS=4.5V
D
D
G
S
G D S
G
STP SERIES TO-220
STB SERIES TO-263(DD-PAK)
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
Limit 40 ±20 TC=25°C TC=70°C 60 48 176 91 TC=25°C TC=70°C 62.5 40 -55 to 150
Units V V A A A mJ W W °C
Sigle Pulse Avalanche Energy Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case
a a
2 62.5
°C/W °C/W
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Nov,14,2008
1
www.samhop.com.tw
www.DataSheet4U.com
STB/P434S
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units V 1 ±100 uA nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=32V , VGS=0V
40
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS ...