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STB/P432S
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
40V
FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
ID
60A
R DS(ON) (m Ω) Max
9 @ VGS=10V 11 @ VGS=4.5V
D
G
S
G D S
S TB S E R IE S TO-263(DD-P AK)
S TP S E R IE S TO-220
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
b a
Limit 40 ±20 TC=25°C 60 240 130 TC=25°C 62.5 -55 to 150
Units V V A A mJ W °C
-Pulsed Sigle Pulse Avalanche Energy d Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient
2 50
°C/W °C/W
Details are subject to change without notice.
Jun,24,2008
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STB/P432S
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
Conditions
VGS=0V , ID=250uA VDS=32V , VGS=0V
Min 40
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance
VGS= ±20V , VDS=0V
1 ±100 1 1.7 7 9 26 1600 280 150 20 21 45 16 32 15 3.5 7.3 30 0.95 1.3 3 9 11
uA nA V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC A V
VDS=VGS , ID=250uA VGS=10V , ID=30A VGS=4.5V , ID=28A VDS=10V , ID=30A
Forward Transconductance DYNAMIC CHARACTERISTICS c
Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS c SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge
VDS=15V,VGS=0V f=1.0MHz
VDD=15V ID=30A VGS=10V RGEN=3.3 ohm VDS=15V,ID=30A,VGS=10V VDS=15V,ID=28A,VGS=4.5V
VDS=15V,ID=30A, VGS=10V Gate-Drain Charge c DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage VGS=0V,IS=30A
Notes
_ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=1.25mH,RG=25Ω,VDD = 20V.(See Figure13)
Jun,24,2008
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STB/P432S
Ver 1.0
60
V G S =4 V
20
T j =125 C
50
I D, Drain Current(A)
I D, Drain Current(A)
V G S = 4.5V
15 -55 C 10
25 C
40
V G S = 10V
30 20
V G S =3 V
5
10
V G S = 2.5V
0 0 0.5 1 1.5 2 2.5 3
0
0
0.8
1.6
2.4
3.2
4.0
4.8
V DS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
15
Figure 2. Transfer Characteristics
2.0 1.8 1.6 1.4 1.2 1.0 0
V G S =10V I D =30A V G S =4.5V I D =28A
12
R DS(on)(m Ω)
V G S = 4.5V
9
6
V G S = 10V
3
1
1
12
24
36
48
60
R DS(on), On-Resistance Normalized
0
25
50
75
100
125
150
T j ( °C )
ID, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
1.3
Figure 4. On-Resistance Variation with Drain Current and Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =250uA
Vth, Normalized Gate-Source Threshold Voltage
1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75
V DS =V G S I D =250uA
100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation with Temperature
Figure 6. Breakdown Voltage Variation with Temperature
Jun,24,2008
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STB/P432S
Ver 1.0
30 25
20.0
Is, Source-drain current(A)
ID=30A
10.0 5.0
R DS(on)(m Ω)
20 15 10 5 0 25 C 75 C 125 C
75 C 125 C 25 C
1.0
0 2 4 6 8 10
0
0.24
0.48
0.72
0.96
1.2
V GS, Gate-to-Source Voltage(V)
V SD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
2400
Figure 8. Body Diode Forward Voltage Variation with Source Current
10
V GS, Gate to Source Voltage(V)
2000
C, Capacitance(pF)
8 6 4 2 0 0
V DS =15V I D =30A
1600 1200 800 C os s 400 0 0 C rs s 5 10
C is s
15
20
25
30
5
10
15
20
25
30
35 40
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
220
T D(off)
1000
I D, Drain Current(A)
Switching Time(ns)
100 60 10
Tr
T D(on)
Tf
100
R
DS
(
) ON
L im
it
1m 10 DC m s
10
s
0u
s
10
V G S =10V S ingle P ulse T c=25 C
1 1
V DS =15V ,ID=30A V G S =10V
6 10
60 100 300 600
1 0.1
1
10
100
Rg, Gate Resistance(Ω)
VDS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
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STB/P432S
Ver 1.0
15V
V ( BR )D S S
tp
VDS
L
DR IV E R
RG
20V
D .