PSMN8R7-80PS

PSMN8R7-80PS Rev. 01 — 29 January 2010 www.DataSheet4U.com N-channel 80 V 8.7 mΩ standard level MOSFET in TO-220 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for standard level gate drive 1.3 Applications „ DC-to-DC converters „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Tj Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 VGS = 10 V; Tj(init) = 25 °C; ID = 90 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14 and 15 VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 [1] Measured 3 mm from package. [1] Symbol Parameter drain current total power dissipation junction temperature Typ - Max 80 90 170 175 120 Unit V A W °C mJ drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge 11.6 52 nC nC - Static characteristics RDSon drain-source on-state resistance 7.5 14 8.7 mΩ mΩ NXP Semiconductors www.DataSheet4U.com PSMN8R7-80PS N-channel 80 V 8.7 m...