MD7IC2050GNR1

Freescale Semiconductor Technical Data Document Number: MD7IC2050N Rev. 0, 8/2009 www.DataSheet4U.com RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on - chip matching that makes it usable from 1750 - 2050 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 30 mA, IDQ2A = 230 mA, VG2B = 1.4 Vdc, Pout = 10 Watts Avg., Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 2025 MHz Gps (dB) 30.5 PAE (%) 34.7 Output PAR (dB) 8.7 ACPR (dBc) - 37.4 MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 1880 - 2100 MHz, 10 W AVG., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 79 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 20 Watts to 80 Watts CW Pout Typical Pout @ 3 dB Compression Point ] 74 Watts CW 1880 MHz Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 30 mA, IDQ2A = 230 mA, VG2B = 1.4 Vdc, Pout = 10 Watts Avg., Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 1880 MHz 1900 MHz 1920 MHz Gps (dB) 30.3 30.2 30.1 PAE (%) 35.2 34.9 34.8 Output PAR (dB) 8.6 8.6 8.7 ACPR (dBc) - 34.9 - 36.3 - 36....