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MD7IC2050NR1 Dataheets PDF



Part Number MD7IC2050NR1
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF LDMOS Wideband Integrated Power Amplifiers
Datasheet MD7IC2050NR1 DatasheetMD7IC2050NR1 Datasheet (PDF)

Freescale Semiconductor Technical Data Document Number: MD7IC2050N Rev. 0, 8/2009 www.DataSheet4U.com RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on - chip matching that makes it usable from 1750 - 2050 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 30 mA, I.

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Freescale Semiconductor Technical Data Document Number: MD7IC2050N Rev. 0, 8/2009 www.DataSheet4U.com RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on - chip matching that makes it usable from 1750 - 2050 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 30 mA, IDQ2A = 230 mA, VG2B = 1.4 Vdc, Pout = 10 Watts Avg., Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 2025 MHz Gps (dB) 30.5 PAE (%) 34.7 Output PAR (dB) 8.7 ACPR (dBc) - 37.4 MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 1880 - 2100 MHz, 10 W AVG., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS • Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 79 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 20 Watts to 80 Watts CW Pout • Typical Pout @ 3 dB Compression Point ] 74 Watts CW 1880 MHz • Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 30 mA, IDQ2A = 230 mA, VG2B = 1.4 Vdc, Pout = 10 Watts Avg., Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 1880 MHz 1900 MHz 1920 MHz Gps (dB) 30.3 30.2 30.1 PAE (%) 35.2 34.9 34.8 Output PAR (dB) 8.6 8.6 8.7 ACPR (dBc) - 34.9 - 36.3 - 36.9 CASE 1618 - 02 TO - 270 WB - 14 PLASTIC MD7IC2050NR1 CASE 1621 - 02 TO - 270 WB - 14 GULL PLASTIC MD7IC2050GNR1 Features • 100% PAR Tested for Guaranteed Output Power Capability • Production Tested in a Symmetrical Doherty Configuration • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • On - Chip Matching (50 Ohm Input, DC Blocked) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel CASE 1617 - 02 TO - 272 WB - 14 PLASTIC MD7IC2050NBR1 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2009. All rights reserved. MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 1 RF Device Data Freescale Semiconductor www.DataSheet4U.com VDS1A RFinA CARRIER (2) RFout1/VDS2A VDS1A VGS2A VGS1A RFinA NC NC NC NC RFinB VGS1B VGS2B VDS1B 1 2 3 4 5 6 7 8 9 10 11 12 14 RFout1/VDS2A VGS1A VGS2A VGS1B VGS2B Quiescent Current Temperature Compensation (1) Quiescent Current Temperature Compensation (1) PEAKING (2) 13 RFout2/VDS2B RFinB VDS1B RFout2/VDS2B (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. 2. Peaking and Carrier orientation is determined by the test fixture design. Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Input Power (1,2) Symbol VDSS VGS VDD Tstg TC TJ Pin Value - 0.5, +65 - 0.5, +10 32, +0 - 65 to +150 150 225 28 Unit Vdc Vdc Vdc °C °C °C dBm Table 2. Thermal Characteristics Characteristic Final Doherty Application Thermal Resistance, Junction to Case Case Temperature 81°C, Pout = 50 W CW Stage 1A, 28 Vdc, IDQ1A = 30 mA Stage 1B, 28 Vdc, IDQ1B = 30 mA Stage 2A, 28 Vdc, IDQ2A = 230 mA Stage 2B, 28 Vdc, VG2B = 1.4 Vdc Case Temperature 73°C, Pout = 10 W CW Stage 1A, 28 Vdc, IDQ1A = 30 mA Stage 1B, 28 Vdc, IDQ1B = 30 mA Stage 2A, 28 Vdc, IDQ2A = 230 mA *Stage 2B, 28 Vdc, VG2B = 1.4 Vdc RθJC 8.2 6.1 1.8 1.4 8.3 3.6 1.9 *Stage 2B is turned off °C/W Symbol Value (2,3) Unit 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 2 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) www.DataSheet4U.com Class 1B (Minimum) A (Mini.


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