FDMC7660

FDMC7660 N-Channel PowerTrench® MOSFET June 2012 FDMC7660 N-Channel PowerTrench® MOSFET 30 V, 20 A, 2.2 mΩ Features General Description „ Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A „ Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Applications „ DC - DC Buck Converters „ Point of Load „ High Efficiency Load Switch and Low Side Switching Top Bottom S Pin 1 S S G S S D D D D D D Power 33 S G D D MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 4) (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 40 100 20 200 200 41 2.3 -55 to + 150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Info...