ACE7400

  www.DataSheet4U.com                                                                                        ACE7400                                               Technology Description N-Channel Enhancement Mode MOSFET The ACE7400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features 30V/2.8A, RDS(ON)=77mΩ@VGS=10V 30V/2.3A, RDS(ON)=85mΩ@VGS=4.5V 30V/1.5A, RDS(ON)=110mΩ@VGS=2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings Symbol Max Unit VDSS 30 V VGSS ±12 V TA=25℃ 2.8 Continuous Drain Current (TJ=150℃) A ID TA=70℃ 2.1 Pulsed Drain Current IDM 10 A Continuous Source Current (Diode Conduction) IS 1.25 A TA=25℃ 0.33 Power Dissipation W PD TA=70℃ 0.21 O Operating Junction Temperature TJ 150 C O Storage Temperature Range TSTG -55/150 C Thermal Resistance-Junction to Ambient RθJA 100 OC/W Parameter Drain-S...