S T M4884A
S amHop Microelectronics C orp. Dec 28 2004 ver1.1
www.DataSheet4U.com
N-C hannel E nhancement Mode Field E...
S T M4884A
S amHop Microelectronics C orp. Dec 28 2004 ver1.1
www.DataSheet4U.com
N-C hannel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
V DS S
30V
F E AT UR E S
(m
ID
12A
R DS (ON)
W)
typ
S uper high dense cell design for low R DS (ON ).
6 @ V G S = 10V 8.5 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage.
S O-8 1
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 30 20 12 44 1.7 2.5 -55 to 150 Unit V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA 50 C /W
1
S T M4884A
Parameter
5
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E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS
c
Condition
V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 12A V GS =4.5V, ID= 10A V DS = 10V, V GS = 10V V DS = 15V, ID = 12A
Min Typ C Max Unit
30 1
100
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage V uA nA V
m ohm
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transcondu...