N -Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
www.DataSheet4U.com Spec. No. : C707J3 Issued Date :...
Description
CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
www.DataSheet4U.com Spec. No. : C707J3 Issued Date : 2009.04.23 Revised Date : Page No. : 1/7
MTB12N04J3
Features
Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package
BVDSS ID RDSON(MAX)
40V 30A 12mΩ
Equivalent Circuit
MTB12N04J3
Outline
TO-252
G:Gate D:Drain S:Source
G D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Symbol Limits Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=20A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
MTB12N04J3
VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg
40 ±20 30 20 120 20 20 10 50 26 -55~+175
V
A
mJ W °C
CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a
www.DataSheet4U.com Spec. No. : C707J3 Issued Date : 2009.04.23 Revised Date : Page No. : 2/7
Value 3 75
Unit °C/W °C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol Static BVDSS VGS(th) GFS IGSS IDSS ID(ON) RDS(ON)
*1 *1
Min. 40 1.5 30 -
Typ. 1.8 25 10.8 15.5 22 3.6 7 ...
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