N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
www.DataSheet4U.com Spec. No. : C432J3 Issued Date : ...
Description
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
www.DataSheet4U.com Spec. No. : C432J3 Issued Date : 2008.12.09 Revised Date : 2009.02.04 Page No. : 1/8
MEN9971J3
Features
Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package
BVDSS ID RDSON(MAX)
60V 25A 20mΩ
Symbol
MEN9971J3
Outline
TO-252
G:Gate D:Drain S:Source
G D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Symbol Limits Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=20A,RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
MEN9971J3
VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg
60 ±20 25 16 100 *1 20 20 10 50 0.31 -55~+175
V
A
mJ W W/°C °C
CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a
www.DataSheet4U.com Spec. No. : C432J3 Issued Date : 2008.12.09 Revised Date : 2009.02.04 Page No. : 2/8
Value 3 75
Unit °C/W °C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol Min. Typ. 1.8 25 16 19 43 7.2 11 20 12 50 25 3330 256 207...
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