MEP4435Q8

CYStech Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Spec. No. : C391Q8-A www.DataSheet4U.com Issued Date : 2008.07.17 Revised Date : Page No. : 1/7 MEP4435Q8 Description The MEP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features RDS(ON)=20mΩ@VGS=-10V, ID=-10A RDS(ON)=35mΩ@VGS=-5V, ID=-7A Simple drive requirement Low on-resistance Fast switching speed Pb-free package Equivalent Circuit MEP4435Q8 Outline SOP-8 G：Gate S：Source D：Drain MEP4435Q8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C Continuous Drain Current @TA=100 °C Pulsed Drain Current (Note 1) Total Power Dissipation @ TA=25 °C (Note 2) Linear Derating Factor Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 2) Symbol BVDSS VGS ID ID IDM Pd Tj Tstg Rth,j-a Spec. No. : C391Q8-A www.DataSheet4U.com Issued Date : 2008.07.17 Revised Date : Page No. : 2/7 Limits -30 ±25 -10 -8 -40 2.5 0.02 -55~+150 -55~+150 50 Unit V V A A A W W / °C °C °C °C/W Note : 1.Pulse width limited by maximum junction temperatur...