BTD882I3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882I3 BVCEO IC RCESAT Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2010.11.05 Page No. : 1/6 30V 3A 125mΩ typ. Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772I3 RoHS compliant package Symbol BTD882I3 Outline TO-251 B：Base C：Collector E：Emitter BB CC E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350μs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg BTD882I3 Limit 40 30 5 3 7 1 10 150 -55~+150 *1 Unit V V V A A W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2010.11.05 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 40 30 5 150 180 - Typ. 0.25 90 45 Max. 1 1 0.5 2 560 - Unit V V V μA μA V V MHz pF Test Conditions IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE 2 Rank P Range 180~390 E 270~560 Ordering Information Device BTD882I3 Package T...