BTD2195J3

CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2010.12.08 Page No. : 1/6 NPN Epitaxial Planar Transistor BTD2195J3 Description BVCEO IC RCESAT 120V 4A 600mΩ The BTD2195J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. RoHS compliant package process is adopted. Equivalent Circuit BTD2195J3 B C Outline TO-252(DPAK) E B：Base C：Collector E：Emitter B CE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Single Pulse Pw≦350μs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) RθJA RθJC Tj Tstg Limits 130 120 5 4 6 (Note ) 1.5 20 83.3 6.25 150 -55~+150 Unit V V V A A W W °C/W °C/W °C °C BTD2195J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2010.12.08 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCEO BVCBO ICBO ICEO IEBO *VCE(sat) *VCE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 Cob Min. 120 130 - 600 1000 300 - Typ. - - Max. 1 2 2 1.25 1.5 2.2 200 Unit Test Conditions V IC=1mA, IB=0 V IC=100μA, IE=0 mA VCB=100V, IE=0 mA VCE=50V, IE=0 mA VEB=5V, IC=0 V IC=2A, IB=8mA V IC=2A, IB=2mA V VCE=4V, IC=2A - VCE=3V, IC=1A - VCE=3V, IC=2A - VCE...