BTC5706A3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C819A3 www.DataSheet4U.com Issued Date : 2006.06.06 Revised Date : Page No. : 1/ 5 BTC5706A3 Features Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Large current capability Pb-free package Applications DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. Symbol BTC5706A3 Outline TO-92 B：Base C：Collector E：Emitter ECB BTC5706A3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD RθJA Tj Tstg Spec. No. : C819A3 www.DataSheet4U.com Issued Date : 2006.06.06 Revised Date : Page No. : 2/ 5 Limits 80 50 6 5 9 (Note 1) 1.2 0.8 156 150 -55~+150 Unit V V V A A W °C/W °C °C Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. Characteristics (Ta=25°C) Symbol BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *hFE 1 *hFE 2 *hFE 3 fT Cob ton tstg tf Min. 80 50 6 200 120 80 Typ. 110 200 0.89 400 15 80 500 60 Max. 1 1 135 240 1.2 450 Unit V V V µA µA mV mV V MHz pF ns ns ns Test Conditions IC=10µA, IE=0 IC=1mA, IB=0 IC=10µA, IC=0 VCB=80V, IE=0 VEB=4V, IC=0 IC=1A, IB=50mA IC=2A, IB=100mA IC=2A, IB=...