DatasheetsPDF.com

BTC5103I3 Dataheets PDF



Part Number BTC5103I3
Manufacturers Cystech Electonics Corp
Logo Cystech Electonics Corp
Description NPN Transistor
Datasheet BTC5103I3 DatasheetBTC5103I3 Datasheet (PDF)

CYStech Electronics Corp. High Speed Switching Transistor Spec. No. : C651I3 www.DataSheet4U.com Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 1/5 BTC5103I3 Features • Low VCE(sat), VCE(sat)=0.33 V(typical), at IC / IB = 3A / 0.3A • High Switching Speed • Wide SOA • Complementary to BTA1952I3 • RoHS compliant package BVCEO IC RCESAT 60V 5A 110mΩ Symbol BTC5103I3 Outline TO-251 B:Base C:Collector E:Emitter B C CE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base .

  BTC5103I3   BTC5103I3


Document
CYStech Electronics Corp. High Speed Switching Transistor Spec. No. : C651I3 www.DataSheet4U.com Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 1/5 BTC5103I3 Features • Low VCE(sat), VCE(sat)=0.33 V(typical), at IC / IB = 3A / 0.3A • High Switching Speed • Wide SOA • Complementary to BTA1952I3 • RoHS compliant package BVCEO IC RCESAT 60V 5A 110mΩ Symbol BTC5103I3 Outline TO-251 B:Base C:Collector E:Emitter B C CE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 100 60 6 5 9 *1 1 30 *2 150 -55~+150 Unit V V V A W °C °C Note : *1. Single Pulse Pw=100ms *2. Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger BTC5103I3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE 1 *hFE 2 fT Cob Min. 100 60 6 82 30 Typ. 0.33 30 80 Max. 10 10 0.4 1.2 270 Unit V V V μA μA V V MHz pF Spec. No. : C651I3 www.DataSheet4U.com Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 2/5 Test Conditions IC=1mA, IE=0 IC=1mA, IB=0 IE=1mA, IC=0 VCB=100V, IE=0 VEB=5V, IC=0 IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=2V, IC=1A VCE=2V, IC=3A VCE=5V, IC=1A, f=30MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Ordering Information Device BTC5103I3 Package TO-251 (RoHS compliant) Shipping 80 pcs / tube, 50 tubes / box Marking C5103 BTC5103I3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 10000 VCE(SAT) Saturation Voltage---(mV) Current Gain---HFE 1000 IC=20IB Spec. No. : C651I3 www.DataSheet4U.com Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 3/5 Saturation Voltage vs Collector Current 100 100 VCE=2V 10 IC=10IB 10 1 10 100 1000 10000 Collector Current---IC(mA) 1 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) VBE(SAT) @ IC=10IB On Vottage vs Collector Current 10000 VBE(ON)@VCE=2V 1000 On Voltage---(mV) 1 10 100 1000 Collector Current---IC(mA) 10000 1000 100 100 1 10 100 1000 Collector Current---IC(mA) 10000 Power Derating Curve 1.2 Power Dissipation---PD(W) Power Dissipation---PD(W) 1 0.8 0.6 0.4 0.2 0 0 50 100 150 Ambient Temperature---TA(℃) 200 35 30 25 20 15 10 5 0 0 Power Derating Curve 50 100 150 200 Case Temperature---TC(℃) BTC5103I3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C651I3 www.DataSheet4U.com Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 4/5 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. BTC5103I3 CYStek Product Specification CYStech Electronics Corp. TO-251 Dimension A B C D Spec. No. : C651I3 www.DataSheet4U.com Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 5/5 Marking: C5103 F 3 E K 2 1 J G I H Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2441 0.2677 0.2677 0.2835 Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.20 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0449 0.0346 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 1.14 0.88 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no li.


BTC5096WC3 BTC5103I3 BTC5103J3


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)