CYStech Electronics Corp.
High Cutoff Frequency NPN Epitaxial Planar Transistor
Spec. No. : C212S3 www.DataSheet4U.com ...
CYStech Electronics Corp.
High Cutoff Frequency
NPN Epitaxial Planar
Transistor
Spec. No. : C212S3 www.DataSheet4U.com Issued Date : 2003.08.15 Revised Date : Page No. : 1/8
BTC5095S3
Description
The BTC5095S3 is a
NPN Silicon
Transistor designed for low noise amplifier at VHF, UHF and CATV band.
Symbol
Outline
BTC5095S3
SOT-323
B:Base C:Collector E:Emitter
Features
Low Noise and High Gain: NF=1.4dB, TYP. @ VCE=2V, Ic=4.2mA, f=0.9GHz Ga=12dB, TYP. @ VCE=2V, Ic=4.2mA, f=0.9GHz ∣S21∣² =13.5dB @ VCE =5V, Ic =4.5mA, f=0.9GHz
Applications
Low noise and high gain amplifiers & Oscillator buffer amplifiers Cordless Phone : LNA , MIX ,and OSC Remote Controller
Absolute Maximum Ratings
Maximum Ratings (Ta=25°C) Parameters Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC Pd Tj Tstg Limits 10 18 2.5 20 150 125 -50~125 Unit V V V mA mW °C °C
*1
Note: *1 Here we define the point DC current gain drops off.
BTC5095S3
CYStek Product Specification
CYStech Electronics Corp.
Electrical Characteristics
Characterization Information (Ta=25°C) Parameters Collector Cutoff Current Emitter Cutoff Current DC Current Gain Cutoff Frequency Minimum Noise Figure Associated Gain Insertion Gain |S21|2 In 50 Ohm system Output Capacitance Conditions Symbol Min VCB =3V, IE=0 ICBO VEB =1V IEBO VCE =2V, IC =1mA hFE(1) 52 VCE ...