BTC4620T3

CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor Spec. No. : C210T3 www.DataSheet4U.com Issued Date : 2004.07.01 Revised Date : 2004.07.22 Page No. : 1/4 BTC4620T3 Features High breakdown voltage. (BVCEO =350V) Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA. Complementary to BTA1776T3 Symbol BTC4620T3 Outline TO-126 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limit 350 350 5 100 200 1.2 7 150 -55~+150 Unit V V V mA W °C °C BTC4620T3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) hFE fT Cob Min. 350 350 5 80 Typ. 0.1 70 2.6 Max. 0.1 0.1 0.6 1 200 Unit V V V µA µA V V MHz pF Spec. No. : C210T3 www.DataSheet4U.com Issued Date : 2004.07.01 Revised Date : 2004.07.22 Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=200V, IE=0 VEB=4V, IC=0 IC=20mA, IB=2mA IC=20mA, IB=2mA VCE=10V, IC=10mA VCE=30V, IC=10mA, f=10MHz VCB=30V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range P 80~140 Q 100~200 BTC4620T3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gai...