BTC4505N3

CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTC4505N3 Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2018.04.13 Page No. : 1/7 Features High breakdown voltage. (BVCEO ≥400V) Low saturation voltage Complementary to BTA1759N3 Pb-free lead plating and halogen-free package Symbol BTC4505N3 Outline SOT-23 B：Base C：Collector E：Emitter Ordering Information Device BTC4505N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BTC4505N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2018.04.13 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limit 400 400 6 300 0.225 150 -55~+150 Unit V V V mA W °C °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 185 556 Unit °C/W Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO *VCE(sat) *VBE(sat) hFE fT Cob Min. 400 400 6 - - 100 - Typ. - 20 7 Max. 100 10...