CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTC4505M3
Spec. No. : C210M3 Issued Date : 2003.05.15 Revised Date :2014.07.24 Page No. : 1/6
Features
High breakdown voltage, BVCEO (min)=400V. Low saturation voltage, typically VCE(sat) =0.14V at IC/IB=50mA/5mA. Complementary to BTA1759M3. Pb-free lead plating and halogen-free...
