BTB772T3

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C817T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 BTB772T3/S Features Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882T3/S Pb-free package is available Equivalent Circuit BTB772T3/S Outline TO-126 B：Base C：Collector E：Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg Limit -40 -30 -5 -3 -7 1 10 150 -55~+150 Unit V V V A A W °C °C *1 Note : *1. Single Pulse Pw≦350µs, Duty≦2%. BTB772T3/S CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -40 -30 -5 52 100 Typ. -0.3 -1 80 55 Max. -1 -1 -0.5 -2 500 Unit V V V µA µA V V MHz pF www.DataSheet4U.com Spec. No. : C817T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 2/4 Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-30V, IE=0 VEB=-3V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 2 Rank Range Q 100~200 P 160~320 E 250~50...