BTB1182J3

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C812J3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4 BTB1182J3 Features Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A Excellent current gain characteristics Complementary to BTD1758J3 Symbol BTB1182J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Single Pulse , Pw=10ms Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits -40 -30 -5 -2 -5 (Note) 10 150 -55~+150 Unit V V V A A W °C °C BTB1182J3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -30 -5 82 Typ. 100 50 Max. -1 -1 -1 560 Unit V V V µA µA V MHz pF www.DataSheet4U.com Spec. No. : C812J3 Issued Date : 2003.05.25 Revised Date : Page No. : 2/4 Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 IC=-3A, IB=-0.1A VCE=-3V, IC=-0.5A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f =1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE Rank Range P 82~180 Q 120~270 R 180~390 S 270~560 BTB1182J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Cu...