CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
Spec. No. : C236L3 www.DataSheet4U.com Issued Da...
CYStech Electronics Corp.
High Voltage
PNP Epitaxial Planar
Transistor
Spec. No. : C236L3 www.DataSheet4U.com Issued Date : 2005.08.16 Revised Date : 2005.08.18 Page No. : 1/4
BTA1727L3
Features
High breakdown voltage, BVCEO=-400V Low saturation voltage High switching speed. Complementary to BTD2568L3 Pb-free package
Symbol
BTA1727L3
Outline
SOT-223
C
E
B:Base C:Collector E:Emitter
C B
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB Pd Tj Tstg Limits -400 -400 -6 -300 -1 -100 5 150 -55~+150 Unit V V V mA A mA W °C °C
BTA1727L3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. -400 -400 -6 50 90 90 40 Typ. 90 7 Max. -100 -100 -0.3 -0.5 -0.8 -0.95 -0.95 260 260 Unit V V V nA nA V V V V V MHz pF
Spec. No. : C236L3 www.DataSheet4U.com Issued Date : 2005.08.16 Revised Date : 2005.08.18 Page No. : 2/4
Test Conditions IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-400V, IE=0 VEB=-4V, IC=0 IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-10V, IC=-50mA VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-50mA VCE=-10V, IC=-100mA VCE=-5V, IC=-50mA, f =100MHz VC...