CYStech Electronics Corp.
3A NPN Epitaxial Planar Power Transistor
www.DataSheet4U.com Issued Date : 2003.09.04
Revised...
CYStech Electronics Corp.
3A
NPN Epitaxial Planar Power
Transistor
www.DataSheet4U.com Issued Date : 2003.09.04
Revised Date : Page No. : 1/4
Spec. No. : C609E3
TIP31CE3
Description
TIP31CE3 is designed for use in general purpose amplifier and switching applications. Low collector-emitter saturation voltage, VCE(sat) = 1.2V(max) @ IC = 3A High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min) High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA
Features
Symbol
TIP31CE3
Outline
TO-220AB
B:Base C:Collector E:Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : 1. Single Pulse , Pw≦380µs, Duty≦2%.
Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg
Limits 100 100 5 3 5 (Note 1) 1 2 40 62.5 3.125 150 -55~+150
Unit V V V A A W °C/W °C/W °C °C
TIP31CE3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol *BVCEO(SUS) ICEO ICES IEBO *VCE(sat) *VBE(on) *hFE *hFE fT Min. 100 25 10 3 Typ. Max. 300 200 1 1.2 1.8 50 Unit V µA µA mA V V MHz
www.DataSheet4U.com Issued Date : 2003.09.04
Revised Date : Page No. : 2/4
Spec. No. : C609E3
Test Conditions IC=30mA, IB=0 VCE=60V, IB=0 VCE=100V, VBE=0 VEB...