SSF6010

SSF6010 www.DataSheet4U.com Feathers: „ „ „ Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60A BV=60V Rdson=10mohm Description: The SSF6010 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6010 is assembled in high reliability and qualified assembly house. Application: „ Power switching application SSF6010 TOP View (TO220) Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS EAR TJ TSTG Thermal Resistance Parameter RθJC RθJA Junction-to-case Junction-to-ambient Parameter BVDSS VGS(th) gfs IDSS Drain-to-Source breakdown voltage Gate threshold voltage Forward transconductance Drain-to-Source leakage current Gate-to-Source forward leakage Gate-to-Source reverse leakage RDS(on) Static Drain-to-Source on-resistance Min. 60 — 2.0 — — — — 58 — — — — Min. — — Typ. — 9 Typ. 1.25 — Max. Units — 10 4.0 — 2 10 100 -100 μA VGS=20V VGS=-20V V mΩ V S Max. — 62 Units ْC/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source voltage Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction and Storage Temperature Range Max. 60 45 240 100 0.74 ±20 220 TBD –55 to +150 ْC W W/ ْC V mJ A Units Electrical Characteristics @TJ=25 ْC(unless o...