MOSFET
SSF2816E
www.DataSheet4U.com
DESCRIPTION
The SSF2816E uses advanced trench technology to provide excellent RDS(ON), low...
Description
SSF2816E
www.DataSheet4U.com
DESCRIPTION
The SSF2816E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
GENERAL FEATURES
● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating:2500V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram
Marking and pin Assignment
Application
●Battery protection ●Load switch ●Power management TSSOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking 2816E Device SSF2816E Device Package TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range
Limit
20 ±12 7 25 1.5 -55 To 150
Unit
V V A A W ℃
VDS VGS ID IDM PD TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 83 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA
Min
20
Typ
Max
Unit
V
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SSF2816E
www.DataSheet4U.com
Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Ga...
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