DatasheetsPDF.com

SSF2306B Dataheets PDF



Part Number SSF2306B
Manufacturers Silikron Semiconductor Co
Logo Silikron Semiconductor Co
Description Battery protection
Datasheet SSF2306B DatasheetSSF2306B Datasheet (PDF)

SSF2306B www.DataSheet4U.com DESCRIPTION The SSF2306B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. G D S GENERAL FEATURES ● VDS = 29V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 40mΩ @ VGS=4.5V RDS(ON) < 35mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking and pin Assignment Application ●Battery protection ●Load switch ●P.

  SSF2306B   SSF2306B



Document
SSF2306B www.DataSheet4U.com DESCRIPTION The SSF2306B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. G D S GENERAL FEATURES ● VDS = 29V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 40mΩ @ VGS=4.5V RDS(ON) < 35mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT-23 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 2306B Device SSF2306B Device Package SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit 29 ±12 5 20 1.38 -55 To 150 Unit V V A A W ℃ VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 90 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current BVDSS IDSS IGSS VGS=0V ID=250μA VDS=30V,VGS=0V VGS=±12V,VDS=0V Min 29 Typ Max Unit V 1 ±100 μA nA ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 SSF2306B www.DataSheet4U.com ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA VGS=2.5V, ID=2.6A Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=5A VGS=10V, ID=5A Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.2A 1.2 V td(on) tr td(off) tf Qg Qgs Qgd VDS=16V,ID=5A,VGS=4.5V VDS=15V,ID=5A VGS=10V,RGEN=3.3Ω RD=3Ω 6 20 20 3 8.5 1.5 3.2 15 nS nS nS nS nC nC nC Clss Coss Crss VDS=25V,VGS=0V, F=1.0MHz 660 90 70 1050 PF PF PF gFS VDS=5V,ID=5A 13 0.5 1.2 50 40 35 V mΩ mΩ mΩ S NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. ©Silikron Semiconductor CO.,LTD. 2 http://www.silikron.com v1.0 SSF2306B www.DataSheet4U.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Rl D G S Vout td(on) ton tr 90% td(off) toff tf 90% Vin Vgs Rgen VOUT 10% INVERTED 10% 90% VIN 10% 50% 50% PULSE WIDTH Figure 1: Switching Test Circuit Figure 2:Switching Waveforms R(t),Normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedanc ©Silikron Semiconductor CO.,LTD. 3 http://www.silikron.com v1.0 SSF2306B www.DataSheet4U.com SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Symbol A A1 A2 b c D E E1 e e1 L L1 θ NOTES Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 4 http://www.silikron.com v1.0 SSF2306B www.DataSheet4U.com ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipmen.


SSF2306 SSF2306B SSF2307


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)