IS64WV12816DBLL

IS61WV12816DALL/DALS IS61WV12816DBLL/DBLS IS64WV12816DBLL/DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM JANUARY 2013 FEATURES HIGH SPEED: (IS61/64WV12816DALL/DBLL) High-speed access time: 8, 10, 12, 20 ns Low Active Power: 135 mW (typical) Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV12816DALS/DBLS) High-speed access time: 25, 35 ns Low Active Power: 55 mW (typical) Low Standby Power: 12 µW (typical) CMOS standby Single power supply — Vdd 1.65V to 2.2V (IS61WV12816DAxx) — Vdd 2.4V to 3.6V (IS61/64WV12816DBxx) Fully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes Industrial and Automotive temperature support Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61WV12816DAxx/DBxx and IS64WV12816D- Bxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) acces...