MMBTSC1815

MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. www.DataSheet4U.com SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C) O Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb=25 OC Parameter DC Current Gain at VCE=6V, IC=2mA Current Gain Group Symbol VCBO VCEO VEBO IC IB Ptot Tj TS Value 60 50 5 150 50 200 150 -55 to +150 Unit V V V mA mA mW O C C O Symbol Min. Typ. Max. Unit O Y G L at VCE=6V, IC=150mA Collector Saturation Voltage at IC=100mA, IB=10mA Base Saturation Voltage at IC=100mA, IB=10mA Collector Cutoff Current at VCB=60V at VEB=5V Gain Bandwidth Product at VCE=10V, IC=1mA Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, IC=0.1mA, f=1KHz, RG=10KΩat hFE hFE hFE hFE hFE VCE(sat) VBE(sat) ICBO IEBO fT COB NF 70 120 200 350 25 80 - 2 1 140 240 400 700 0.25 1 0.1 0.1 3 1 V V µA µA MHz pF dB SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 MMBTSC1815 www.DataSheet4U.com SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a com...