MMBTSA1505
PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications.
The transistor is sub...
MMBTSA1505
PNP Silicon Epitaxial Planar
Transistor For switching and general purpose applications.
The
transistor is subdivided into three groups O, Y and GR, according to its DC current gain.
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Features Excellent hFE linearity: hFE=25(min) at VCE=-6V, IC=-400mA
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS Value 35 30 5 500 50 200 150 -55 to +150 Unit V V V mA mA mW
O
C C
O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
MMBTSA1505
Characteristics at Tamb=25 OC Symbol DC Current Gain at -VCE=1V, -IC=100mA Current Gain Group O Y GR at -VCE=6V, -IC=400mA Collector Cutoff Current at -VCB=35V Emitter Cutoff Current at -VEB=5V Collector Saturation Voltage at -IC=100mA, -IB=10mA Base Emitter Voltage at -VCE=1V, -IC=100mA Transition Frequency at -VCE=6V, -IC=20mA Collector Output Capacitance at -VCB=6V, f=1MHz Cob 13 fT 200 -VBE -VCE(sat) -IEBO -ICBO O Y hFE hFE hFE hFE hFE 70 120 200 25 40 Min. Typ.
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Max.
Unit
140 240 400 0.1 0.1 0.25 1 -
µA µA V V MHz pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock...