STPSC806

www.DataSheet4U.com STPSC806 600 V power Schottky silicon carbide diode Features ■ ■ ■ No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. Table 1. TO-220AC STPSC806D Device summary IF(AV) VRRM Tj (max) QC (typ) 8A 600 V 175 °C 10 nC September 2009 Doc ID 16286 Rev 1 1/7 www.st.com 7 Characteristics www.DataSheet4U.com STPSC806 1 Characteristics Table 2. Symbol VRRM IF(RMS) IF(AV) IFSM IFRM Tstg Tj Absolute ratings (limiting values at 25 °C unless otherwise specified) Parameter Repetitive peak reverse voltage Forward rms current Average forward current Surge non repetitive forward current Tc = 115 °C, δ = 0.5 tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs square, Tc = 25 °C Value 600 18 8 30 24 120 30 -55 to +175 -40 to +175 Unit V A A A Repetitive peak forward current TC = 115 °C, Tj = 150 °C, δ = 0.1, Storage temperature range Operating junction temperature A °C °...