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STPSC1206

ST Microelectronics

600V power Schottky silicon carbide diode


Description
www.DataSheet4U.com STPSC1206 600 V power Schottky silicon carbide diode Features ■ ■ ■ No reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode Description These diodes are manufactured using silicon carbide substrate. This wide bandgap material supports the manufacture of a Schottky diode structure with a high volta...



ST Microelectronics

STPSC1206

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