SI4618DY

Si4618DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY Channel-1 Channel-2 VDS (V) 30 30 RDS(on) (Ω) 0.017 at VGS = 10 V 0.0195 at VGS = 4.5 V 0.010 at VGS = 10 V 0.0115 at VGS = 4.5 V ID (A)a 8.0 7.5 15.2 14.1 Qg (Typ.) 12.5 17 SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.43 V at 1.0 A IF (A)a 3.8 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook Logic dc-to-dc Low Current dc-to-dc D1 G1 1 S2 2 S2 3 G2 4 SO-8 8 D1 7 S1/D2 6 S1/D2 5 S1/D2 Top View Ordering Information: Si4618DY-T1-E3 (Lead (Pb)-free) Si4618DY-T1-GE3 (Lead (Pb)-free and Halogen-free) G1 N-Channel 1 MOSFET G2 N-Channel 2 MOSFET S2 S1/D2 Schottky Diode ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel-1 Channel-2 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS ISM IAS EAS PD TJ, Tstg 30 30 ± 16 ± 16 8.0 15.2 6.4 12.1 6.7b, c 5.4b, c 35 11.4b, c 9...