TIM5964-80SL

MICROWAVE POWERwww.DataSheet4U.com GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-80SL TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level „ HIGH POWER P1dB=49.0dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=7.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 ΔG ( Ta= 25°C ) UNIT dBm dB A dB % dBc A °C MIN. 48.0 6.0 ⎯ ⎯ ⎯ -25 ⎯ ⎯ TYP. MAX. 49.0 ⎯ 7.0 18.0 ⎯ 35 -30 ⎯ ⎯ ⎯ 20.0 ±0.8 ⎯ ⎯ 16.0 100 CONDITIONS VDS= 10V IDSset≅10.0A f = 5.9 to 6.4GHz ηadd IM3 IDS2 ΔTch Two-Tone Test Po=42.0dBm (Single Carrier Level) (VDS X IDS +Pin-P1dB) X Rth(c-c) Recommended Gate Resistance(Rg) : 28 Ω (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) ( Ta= 25°C ) UNIT S V A V °C/W MIN. ⎯ -1.0 ⎯ -5 ⎯ TYP. 20 -1.8 38 ⎯ 0.5 MAX. ⎯ -3.0 ⎯ ⎯ 0.6 CONDITIONS VDS= 3V IDS= 12.0A VDS= 3V IDS= 200mA VDS= 3V VGS= 0V IGS= -1.0mA Channel to Case ‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringeme...