MICROWAVE POWER GaAs FET
MICROWAVE POWERwww.DataSheet4U.com GaAs FET MICROWAVE SEMICONDUCTOR
TIM5964-6UL
TECHNICAL DATA FEATURES
HIGH POWER P...
Description
MICROWAVE POWERwww.DataSheet4U.com GaAs FET MICROWAVE SEMICONDUCTOR
TIM5964-6UL
TECHNICAL DATA FEATURES
HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ΔTch IDS1 ΔG G1dB SYMBOL P1dB
( Ta= 25°C )
UNIT dBm dB A dB % MIN. 37.5 9.0 ⎯ ⎯ ⎯ -44 ⎯ ⎯ TYP. MAX. 38.5 10.0 1.6 ⎯ 40 -47 1.6 ⎯ ⎯ ⎯ 1.9 ±0.6 ⎯ ⎯ 1.9 80
CONDITIONS
VDS= 10V
f = 5.9 to 6.4GHz
ηadd
IM3 Two-Tone Test Po= 27.5dBm
(Single Carrier Level)
(VDS X IDS +Pin-P1dB) X Rth(c-c)
dBc A °C
Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL
( Ta= 25°C )
UNIT mS V A V °C/W MIN. ⎯ -1.0 ⎯ -5 ⎯ TYP. MAX. 1240 -2.5 3.6 ⎯ 3.8 ⎯ -4.0 ⎯ ⎯ 4.6
CONDITIONS VDS= 3V IDS= 2.0A VDS= 3V IDS= 20mA VDS= 3V VGS= 0V IGS= -70μA Channel to Case
gm
VGSoff IDSS VGSO Rth(c-c)
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