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TIM5964-30SL

Toshiba Semiconductor
Part Number TIM5964-30SL
Manufacturer Toshiba Semiconductor
Description MICROWAVE POWER GaAs FET
Features n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level n HIGH POWER P1dB=45.0 dBm at 5.9GHz ...
Published Feb 22, 2010
Datasheet PDF File TIM5964-30SL PDF File


TIM5964-30SL
TIM5964-30SL


Features
n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level n HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=8.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORM...



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