Part Number | TIM5964-30SL |
Manufacturer | Toshiba Semiconductor |
Description | MICROWAVE POWER GaAs FET |
Features | n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level n HIGH POWER P1dB=45.0 dBm at 5.9GHz ... |
Published | Feb 22, 2010 |
Datasheet | TIM5964-30SL PDF File |