FKP202

N-Channel MOS FET FKP202 ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guarantee March. 2007 ■Package---FM20 (TO220 Full Mold) ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2) G (1) S (3) ■Absolute maximum ratings Parameter Symbol Rating (Ta=25°C） Unit Drain to Source Voltage VDSS 200 V Gate to Source Voltage VGSS ±30 V Continuous Drain Current ID ±45A A Pulsed Drain Current ID(pulse) *1 ±180A A Maximum Power Dissipation Single Pulse Avalanche Energy PD EAS *2 40 (Tc=25°C) W 200 mJ Avalanche Current IAS 45 A Channel Temperature Tch 150 °C Storage Temperature Tstg －55 to 150 °C *1. PW≤100μs，duty cycle≤１% *2. VDD=20V, L=180μH，ILp=45A, unclamped, RG=50Ω, See Fig.1 . Sanken Electric Co., Ltd. http://www.sanken-ele.co.jp/en/ 1/9 T02-006EA-070227 N-Channel MOS FET FKP202 March. 2007 Parameter Drain to Source breakdown Voltage Electrical characteristics Symbol Test Conditions MIN. (Ta=25°C） Limits Unit TYP. MAX. V(BR)DSS ID=100μA,VGS=0V 200 V Gate to Source Leakage Current IGSS VGS=±30V ±100 nA Drain to Source Leakage Current IDSS VDS=200V, VGS=0V 100 μA Gate Threshold Voltage VTH VDS=10V, ID=1mA 3.0 4.5 V Forward Transconductance Re(Yfs) VDS=10V, ID=22A 18 28 S Static Drain to Source On-Resistance RDS(on) ID=22A, VGS=10V 45 53 mΩ Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss VDS=25V Coss VGS=0V f=1MHz Crss 2000 ...