JDH3D01S

JDH3D01S TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S ○ For wave detection ¾ Small package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 4 25 125 −55~125 Unit V mA °C °C 1. 1 ANODE1 1 SSM ｱﾉｰﾄﾞ 2. CATHODE2 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 3 ｶｿｰﾄﾞ 3. 2 CATHODE1/ANODE2 ｶｿｰﾄﾞ 1/ｱﾉｰﾄﾞ 2 ― ― 1-2S1C JEDEC JEITA TOSHIBA Weight:0.0024g(typ.) Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Forward current Reverse current Capacitance Symbol VF IF IR IF = 2 mA VF = 0.5 V VR = 0.5 V Test Condition Min ⎯ 25 ⎯ ⎯ Typ. 0.25 ⎯ ⎯ 0.6 Max ⎯ ⎯ 25 ⎯ Unit V mA uA pF CT VR = 0.2 V, f = 1 MHz Marking B H Caution This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contac...