JDH2S02FS

JDH2S02FS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S02FS UHF Band Mixer Suitable for reducing set size through the use of a two-pin small package supporting high-density mounting Unit: mm 0.6±0.05 0.1 0.8±0.05 A Characteristic Maximum (peak) reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 10 10 125 −55~125 Unit V mA °C °C 0.07 M 0.1 A 0.2 ±0.05 0.1±0.05 0.48 +0.02 -0.03 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC JEITA TOSHIBA ― ― 1-1L1A Weight: 0.0006 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Forward current Reverse current Capacitance Symbol VF IF IR CT IF = 1 mA VF = 0.5 V VR = 0.5 V VR = 0.2 V, f = 1 MHz Test Condition Min ⎯ 2 ⎯ ⎯ Typ. 0.24 ⎯ ⎯ 0.3 Max ⎯ ⎯ 25 ⎯ Unit V mA μA pF Note: Signal level when capacitance is measured: Vsig = 20 mVrms Marking Caution This device is sensitive to electros...