P-Channel Enhancement Mode Power Mos.FET
SSM9435
Elektronische Bauelemente
www.DataSheet4U.com
-6A, -30V,RDS(ON) 50m£[
P-Channel Enhancement Mode Power Mos.FE...
Description
SSM9435
Elektronische Bauelemente
www.DataSheet4U.com
-6A, -30V,RDS(ON) 50m£[
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SSM9435 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.
SOT-223
Features
* Simple Drive Requirement * Fast Switching Characteristic * Lower On-Resistance
D
REF. A C D E I H
Date Code
9 4 3 5
G
G D S
Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35
REF. B J 1 2 3 4 5
S
Millimeter Min. Max. 13°TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1,2 3 3
Symbol
VDS VGS ID@TA=25 oC ID@TA=70 C IDM PD@TA=25 C
o o
Ratings
-30
±25 -6.0 -4 ..8 -20 2.7 0.02
Unit
V V A A A W
W / oC
o
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max. Rthj-a
Ratings
45
Unit
o
C/W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SSM9435
Elektronische Bauelemente
www.DataSheet4U.com
-6A, -30V,RDS(ON) 50m£[
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp....
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