MRF8P9300HR6

Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 0, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.6 19.6 19.4 hD (%) 35.4 35.6 35.8 Output PAR (dB) 6.0 6.0 5.9 ACPR (dBc) - 37.3 - 37.1 - 36.7 MRF8P9300HR6 MRF8P9300HSR6 920 - 960 MHz, 100 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 425 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Typical Pout @ 1 dB Compression Point ] 326 Watts CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate-Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications RoHS Compliant In Tape and Reel. R6 Suffix = 150...